View NCS2540DTR2G_5295572.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

? semiconductor components industries, llc, 2006 may, 2006 ? rev. 1 1 publication order number: ncs2540/d ncs2540 triple 750 mhz voltage feedback op amp with enable feature ncs2540 is a triple 750 mhz voltage feedback monolithic operational amplifier featuring high slew rate and low differential gain and phase error. the voltage feedback architecture allows for a superior bandwidth and low power consumption. this device features an enable pin. features ? ? 3.0 db small signal bw (a v = +2.0, v o = 0.5 v p ? p ) 750 mhz typ ? slew rate 1700 v/ s ? supply current 13 ma/amp ? input referred voltage noise 5.0 nv/ hz ? thd ? 64 dbc (f = 5.0 mhz, v o = 2.0 v p ? p ) ? output current 100 ma ? enable pin available ? this is a pb ? free device applications ? line drivers ? radar/communication receivers figure 1. frequency response: gain (db) vs. frequency av = +2.0 ? 3 ? 12 ? 15 1k 1m normalized gain (db) frequency (hz) 100k 10m 100m 10 g 0 ? 6 3 ? 9 gain = +2 v s = 5v r f = 150 r l = 150 1g 10k v out = 0.5 v pp v out = 1.0 v pp v out = 2.0 v pp *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. marking diagram tssop ? 16 dt suffix case 948f 2540 = ncs2540 a = assembly location l = wafer lot y = year w = work week = pb ? free package (note: microdot may be in either location) http://onsemi.com 1 2 3 4 ? in1 +in1 v ee1 ? in2 v cc1 out1 en v cc2 (top view) tssop ? 16 pinout + ? 16 1 ncs 2540 alyw 5 6 7 8 +in2 v ee2 ? in3 +in3 10 9 out2 v cc3 out3 v ee3 11 12 13 14 15 16 + ? + ? device package shipping ? ordering information tssop ? 16 (pb ? free) 96 units/rail ncs2540dtg tssop ? 16 (pb ? free) 2500 tape & reel NCS2540DTR2G ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d.
ncs2540 http://onsemi.com 2 pin function description pin symbol function equivalent circuit 10, 12, 15 outx output v cc out v ee esd 3, 6, 9 v ee negative power supply 2, 5, 8 +inx non ? inverted input v cc +in v ee ? in esd esd 1, 4, 7 ? inx inverted input see above 11, 13, 16 v cc positive power supply 14 en enable v cc en v ee esd enable pin truth table high low* enable disabled enabled *default open state ? in v ee v cc +in out c c fi g ure 2. sim p lified device schematic
ncs2540 http://onsemi.com 3 attributes characteristics value esd human body model machine model charged device model 2.0 kv 200 v 1.0 kv moisture sensitivity (note 1) level 1 flammability rating oxygen index: 28 to 34 ul 94 v ? 0 @ 0.125 in 1. for additional information, see application note and8003/d. maximum ratings parameter symbol rating unit power supply voltage v s 11 vdc input voltage range v i v s vdc input differential voltage range v id v s vdc output current i o 100 ma maximum junction temperature (note 2) t j 150 c operating ambient temperature t a ? 40 to +85 c storage temperature range t stg ? 60 to +150 c power dissipation p d (see graph) mw thermal resistance, junction ? to ? air r ja 179 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 2. power dissipation must be considered to ensure maximum junction temperature (t j ) is not exceeded. maximum power dissipation the maximum power that can be safely dissipated is limited by the associated rise in junction temperature. for the plastic packages, the maximum safe junction temperature is 150 c. if the maximum is exceeded momentarily, proper circuit operation will be restored as soon as the die temperature is reduced. leaving the device in the ?overheated?? condition for an extended period can result in device damage. figure 3. power dissipation vs. temperature 800 400 0 ? 50 0 75 15 0 maximum power dissipation (mw) ambient temperature (c) 200 ? 25 25 50 100 125 1000 600 1400 1200
ncs2540 http://onsemi.com 4 ac electrical characteristics (v cc = +5.0 v, v ee = ? 5.0 v, t a = ? 40 c to +85 c, r l = 150 to gnd, r f = 150 , a v = +2.0, enable is left open, unless otherwise specified). symbol characteristic conditions min typ max unit frequency domain performance bw bandwidth 3.0 db small signal 3.0 db large signal a v = +2.0, v o = 0.5 v p ? p a v = +2.0, v o = 2.0 v p ? p 750 350 mhz gf 0.1db 0.1 db gain flatness bandwidth a v = +2.0 40 mhz dg differential gain a v = +2.0, r l = 150 , f = 3.58 mhz 0.07 % dp differential phase a v = +2.0, r l = 150 , f = 3.58 mhz 0.01 time domain response sr slew rate a v = +2.0, v step = 2.0 v 1700 v/ s t s settling time 0.1% a v = +2.0, v step = 2.0 v 10 ns t r t f rise and fall time (10% ? 90%) a v = +2.0, v step = 2.0 v 2.0 ns t on turn ? on time 20 ns t off turn ? off time 40 ns harmonic/noise performance thd total harmonic distortion f = 5.0 mhz, v o = 2.0 v p ? p ? 64 db hd2 2nd harmonic distortion f = 5.0 mhz, v o = 2.0 v p ? p ? 65 dbc hd3 3rd harmonic distortion f = 5.0 mhz, v o = 2.0 v p ? p ? 75 dbc ip3 third ? order intercept f = 10 mhz, v o = 1.0 v p ? p 40 dbm sfdr spurious ? free dynamic range f = 5.0 mhz, v o = 2.0 v p ? p 65 dbc e n input referred voltage noise f = 1.0 mhz 5.0 nv hz i n input referred current noise f = 1.0 mhz 4.0 pa hz
ncs2540 http://onsemi.com 5 dc electrical characteristics (v cc = +5.0 v, v ee = ? 5.0 v, t a = ? 40 c to +85 c, r l = 150 to gnd, r f = 150 , a v = +2.0, enable is left open, unless otherwise specified). symbol characteristic conditions min typ max unit dc performance v io input offset voltage (note 3) ? 10 0 +10 mv v io / t input offset voltage temperature coefficient 6.0 v/ c i ib input bias current v o = 0 v 3.2 20 a i ib / t input bias current temperature coefficient v o = 0 v 40 na/ c v ih input high voltage (enable) (note 3) 3.0 v v il input low voltage (enable) (note 3) 1.0 v input characteristics v cm input common mode voltage range (note 3) 3.0 3.2 v cmrr common mode rejection ratio (note 3) (see graph) 40 50 db r in input resistance 4.5 m c in differential input capacitance 1.0 pf output characteristics r out output resistance 0.1 v o output voltage range 3.0 4.0 v i o output current 50 100 ma power supply v s operating voltage supply 10 v i s,on power supply current ? enabled per amplifier (note 3) 5.0 13 17 ma i s,off power supply current ? disabled per amplifier 0.1 0.3 ma psrr power supply rejection ratio (note 3) (see graph) 40 56 db crosstalk channel to channel, f = 5 mhz 85 db 3. guaranteed by design and/or characterization.
ncs2540 http://onsemi.com 6 ac electrical characteristics (v cc = +2.5 v, v ee = ? 2.5 v, t a = ? 40 c to +85 c, r l = 150 to gnd, r f = 150 , a v = +2.0, enable is left open, unless otherwise specified). symbol characteristic conditions min typ max unit frequency domain performance bw bandwidth 3.0 db small signal 3.0 db large signal a v = +2.0, v o = 0.5 v p ? p a v = +2.0, v o = 1.0 v p ? p 550 200 mhz gf 0.1db 0.1 db gain flatness bandwidth a v = +2.0 35 mhz dg differential gain a v = +2.0, r l = 150 , f = 3.58 mhz 0.07 % dp differential phase a v = +2.0, r l = 150 , f = 3.58 mhz 0.02 time domain response sr slew rate a v = +2.0, v step = 1.0 v 900 v/ s t s settling time 0.1% a v = +2.0, v step = 1.0 v 10 ns t r t f rise and fall time (10% ? 90%) a v = +2.0, v step = 1.0 v 1.7 ns t on turn ? on time 20 ns t off turn ? off time 40 ns harmonic/noise performance thd total harmonic distortion f = 5.0 mhz, v o = 1.0 v p ? p ? 60 db hd2 2nd harmonic distortion f = 5.0 mhz, v o = 1.0 v p ? p ? 65 dbc hd3 3rd harmonic distortion f = 5.0 mhz, v o = 1.0 v p ? p ? 63 dbc ip3 third ? order intercept f = 10 mhz, v o = 0.5 v p ? p 35 dbm sfdr spurious ? free dynamic range f = 5.0 mhz, v o = 1.0 v p ? p 63 dbc e n input referred voltage noise f = 1.0 mhz 5.0 nv hz i n input referred current noise f = 1.0 mhz 4.0 pa hz
ncs2540 http://onsemi.com 7 dc electrical characteristics (v cc = +2.5 v, v ee = ? 2.5 v, t a = ? 40 c to +85 c, r l = 150 to gnd, r f = 150 , a v = +2.0, enable is left open, unless otherwise specified). symbol characteristic conditions min typ max unit dc performance v io input offset voltage (note 4) ? 10 0 +10 mv v io / t input offset voltage temperature coefficient 6.0 v/ c i ib input bias current v o = 0 v 3.2 20 a i ib / t input bias current temperature coefficient v o = 0 v 40 na/ c v ih input high voltage (enable) (note 4) 1.5 v v il input low voltage (enable) (note 4) 0.5 v input characteristics v cm input common mode voltage range (note 4) 1.1 1.5 v cmrr common mode rejection ratio (note 4) (see graph) 40 50 db r in input resistance 4.5 m c in differential input capacitance 1.0 pf output characteristics r out output resistance 0.1 v o output voltage range 1.1 1.5 v i o output current 50 100 ma power supply v s operating voltage supply 5.0 v i s,on power supply current ? enabled per amplifier 5.0 11 17 ma i s,off power supply current ? disabled per amplifier 0.1 0.3 ma psrr power supply rejection ratio (note 4) (see graph) 40 56 db crosstalk channel to channel, f = 5 mhz 85 db 4. guaranteed by design and/or characterization. + ? v in r l r f r f v out figure 4. typical test setup (a v = +2.0, r f = 150 k , r l = 150 )
ncs2540 http://onsemi.com 8 figure 5. frequency response: gain (db) vs. frequency av = +2.0 figure 6. frequency response: gain (db) vs. frequency av = +1.0 figure 7. large signal frequency response gain (db) vs. frequency figure 8. small signal frequency response gain (db) vs. frequency figure 9. small signal step response vertical: 20 mv/div horizontal: 3 ns/div figure 10. large signal step response vertical: 1 v/div horizontal: 3 ns/div v s = 5v ? 9 ? 18 1m normalized gain (db) frequency (hz) 100k 10m 100m 10g 0 gain = +1 v s = 5v r f = 150 r l = 150 v out = 1.0 v pp v out = 0.5 v pp 10k 1g ? 12 ? 15 1m normalized gain (db) frequency (hz) 100k 10m 100m ? 3 ? 6 3 6 0 v s = 5v r f = 150 r l = 150 1g 1m normalized gain (db) frequency (hz) 100k 10m 100m 10g v out = 0.5 v pp v s = 5v r f = 150 r l = 150 gain = +1 10k 1g gain = +2 ? 6 ? 3 6 9 3 12 ? 9 ? 18 0 ? 6 ? 3 6 9 3 12 gain = +2 v out = 2.0 v pp v out = 0.7 v pp gain = +2 v out = 1.0 v pp gain = +1 v out = 1.0 v pp v s = 5v ? 3 ? 12 ? 15 1k 1m normalized gain (db) frequency (hz) 100k 10m 100m 10g 0 ? 6 3 ? 9 gain = +2 v s = 5v r f = 150 r l = 150 1g 10k v out = 0.5 v pp v out = 1.0 v pp v out = 2.0 v pp ? 12 ? 15 ? 9 ? 15 ? 12
ncs2540 http://onsemi.com 9 figure 11. thd, hd2, hd3 vs. frequency figure 12. thd, hd2, hd3 vs. output voltage figure 13. input referred voltage noise vs. frequency figure 14. cmrr vs. frequency figure 15. psrr vs. frequency ? 60 ? 65 ? 80 110 distortion (db) frequency (mhz) ? 55 ? 70 ? 40 hd2 hd3 thd ? 50 ? 70 ? 75 ? 80 03 distortion (db) v out (v pp ) ? 60 0.5 2.5 3.5 2 ? 65 ? 55 1.5 4 thd hd2 0.08 ? 0.02 ? 0.04 ? 0.08 ? 0.8 0.2 differential gain (%) offset voltage (v) 0.02 ? 0.6 0 0.6 ? 0.2 0 0.04 ? 0.4 0.8 0.4 ? 40 ? 45 4.5 1 hd3 10 0 10 1k voltage noise (nv/ 5v ? 60 ? 70 10k 1m psrr (db) frequency (hz) 100k 10m 100m ? 40 ? 50 ? 30 ? 20 figure 16. differential gain ? 10 0 ? 75 ? 45 ? 50 100 gain = +2 v out = 2 v pp v s = 5v r f = 150 r l = 150 gain = +2 freq = 5 mhz v s = 5v r f = 150 r l = 150 v s = 5v gain = +2 v s = 5v r f = 150 r l = 150 ? 0.06 0.06 3.58mhz 4.43mhz 10mhz 20mhz ? 50 ? 55 10k 1m cmrr (db) frequency (hz) 100k 10m 100m ? 40 ? 45 ? 35 ? 30 v s = 5v ? 25 ? 20
ncs2540 http://onsemi.com 10 figure 17. differential phase figure 18. supply current per amplifier vs. power supply (enabled) figure 19. supply current per amplifier vs. temperature (disabled) figure 20. output voltage swing vs. supply voltage 11 7 6 4 current (ma) power supply voltage (v) 9 10 8 10 11 85 c 12 0.14 0.04 0.02 0.00 4 current (ma) power supply voltage (v) 0.08 610 8 0.06 0.10 711 9 8 4 3 2 4 output voltage (v pp ) power supply voltage (v) 6 510 6 5 7 711 8 100 1 0.01 10k output resistance ( ) frequency (hz) 10 1m 100k 100m v s = 5v 10m 25 c ? 40 c 85 c 25 c ? 40 c 85 c 25 c ? 40 c 13 14 0.12 figure 21. output resistance vs. frequency 3 0 ? 6 normalized gain (db) frequency (hz) 6 ? 3 100pf 10k 10m 10g 100k 1m 100m 47pf 10pf figure 22. frequency response vs. capacitive load 56789 5 9 1g 10g 0.1 9 12 ? 9 ? 12 1g 0.03 ? 0.01 ? 0.02 ? 0.03 ? 0.8 0.2 differential phase ( ) offset voltage (v) 0.01 ? 0.6 0 0.6 ? 0.2 0 0.02 ? 0.4 0.8 0.4 3.58mhz 4.43mhz 10mhz 20mhz gain = +2 v s = 5v r f = 150 r l = 150 gain = +2 v out = 0.5 v pp v s = 5v r f = 150 r l = 150
ncs2540 http://onsemi.com 11 figure 23. turn on time delay vertical: 500 mv/div (enable), 200 mv/div (output) horizontal: 5 ns/div output waveform: squarewave, 32 mhz, 600 mv pp v s = 5v out en ? 40 ? 70 ? 100 1 crosstalk (dbc) frequency (mhz) ? 80 10 100 1000 ? 30 ? 50 ? 10 0 ? 20 ? 60 channel 3 channel 1 figure 24. turn off time delay vertical: 500 mv/div (enable), 200 mv/div (output) horizontal: 10 ns/div gain = +2 v s = 5v r f = 150 r l = 150 ? 90 0 ? 4 ? 6 10k 1m normalized gain (db) frequency (hz) 100k 10m 100m 1g 2 4 6 ? 2 ch3 ch2 figure 25. crosstalk vs frequency (crosstalk measured on channel 2 with input signal on channel 1 and 3) 10g ch1 gain = +2 v s = 5v r f = 150 r l = 150 figure 26. channel matching (db) vs frequency output waveform: squarewave, 32 mhz, 600 mv pp out en v s = 5v
ncs2540 http://onsemi.com 12 printed circuit board layout techniques proper high sp eed pcb design rules should be used for all wideband amplifiers as the pcb parasitics can affect the overall performance. most important are stray capacitances at the output and inverting input nodes as it can effect peaking and bandwidth. a space (3/16 is plenty) should be left around the signal lines to minimize coupling. also, signal lines connecting the feedback and gain resistors should be short enough so that their associated inductance does not cause high frequency gain errors. line lengths less than 1/4 are recommended. video performance this device designed to provide good performance with ntsc, pal, and hdtv video signals. best performance is obtained with back terminated loads as performance is degraded as the load is increased. the back termination reduces reflections from the transmission line and effectively masks transmission line and other parasitic capacitances from the amplifier output stage. esd protection all device pins have limited esd protection using internal diodes to power supplies as specified in the attributes table (see figure 27). these diodes provide moderate protection to input overdrive voltages above the supplies. the esd diodes can support high input currents with current limiting series resistors. keep these resistor values as low as possible since high values degrade both noise performance and frequency res ponse. under closed ? loop operation, the esd diodes have no effect on circuit performance. however, under certain conditions the esd diodes will be evident. if the device is driven into a slewing condition, the esd diodes will clamp large dif ferential voltages until the feedback loop restores closed ? loop operation. also, if the device is powered down and a large input signal is applied, the esd diodes will conduct. note: human body model for +in and ?in pins are rated at 0.8kv while all other pins are rated at 2.0kv. v cc internal circuitry v ee external pin figure 27. internal esd protection
ncs2540 http://onsemi.com 13 package dimensions ??? ??? 4.90 5.10 0.193 0.200 b 4.30 4.50 0.169 0.177 c ??? 1.20 ??? 0.047 d 0.05 0.15 0.002 0.006 f 0.50 0.75 0.020 0.030 g 0.65 bsc 0.026 bsc h 0.18 0.28 0.007 0.011 j 0.09 0.20 0.004 0.008 j1 0.09 0.16 0.004 0.006 k 0.19 0.30 0.007 0.012 k1 0.19 0.25 0.007 0.010 l 6.40 bsc 0.252 bsc m 0 8 0 8 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimension a does not include mold flash. protrusions or gate burrs. mold flash or gate burrs shall not exceed 0.15 (0.006) per side. 4. dimension b does not include interlead flash or protrusion. interlead flash or protrusion shall not exceed 0.25 (0.010) per side. 5. dimension k does not include dambar protrusion. allowable dambar protrusion shall be 0.08 (0.003) total in excess of the k dimension at maximum material condition. 6. terminal numbers are shown for reference only. 7. dimension a and b are to be determined at datum plane ? w ? . section n ? n seating plane ident. pin 1 1 8 16 9 detail e j j1 b c d a k k1 h g ? u ? s u 0.15 (0.006) t s u 0.15 (0.006) t s u m 0.10 (0.004) v s t 0.10 (0.004) ? t ? ? v ? ? w ? 0.25 (0.010) 16x ref k n n tssop ? 16 dt suffix case 948f ? 01 issue a on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?t ypicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license un der its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended f or surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in a ny manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 ncs2540/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative

▲Up To Search▲

Price & Availability of NCS2540DTR2G

	To Download NCS2540DTR2G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .